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S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current

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S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current

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Brand Name : Hamamatsu

Model Number : S2387-66R

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 1000pcs/Month

Delivery Time : 3-5work days

Packaging Details : In box

Price : Negotiable

pulse : 340-1100

Gap LED 560nm : 0.33

typ ua : 50

times : 1.12

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Product Description:

S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current

 

Features:

Large area high speed silicon PIN photodiode

The S2387-66R has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is suitable for FSO(free space Optics) and high speed pulsed light detection.

Product features

Photosensitive area: φ5.0mm

Cut-off frequency: 40 MHz (VR=24 V)

High reliability: TO-8 metal package

Measurement conditions Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=24 V, Cutoff frequency: VR=24 V, Terminal capacitance: VR=24 V, F =1 MHz, λ=λp, Noise equivalent power: VR=24 V, λ=λp, unless otherwise noted

 

Specifications:

Peak sensitivity wavelength (typical value) 920 nm
Sensitivity (typical value) 0.58 A/W
Dark current (maximum) 4300pA
Rise time (typical value) 18 mu s
Junction capacitance (typical value)

40 pF

 

 

S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current


Product Tags:

S2387-66R

      

Photoelectric IR Sensor

      

UVTRON Flame Sensor

      
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