YJJ S1337-21 Silicon Photodiode The Ideal Solution for Precision Photometry in UV to IR Bands

Product Description:

S1337-21 Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Features:

Receiving surface 18 × 18 mm

Encapsulated ceramics

Package category is not sealed

Package category is not sealed

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Sensitivity (typical value) 0.52 A/W

Dark current (Max.) 500 pA

Rise time (typical value) 8 μs

Junction capacitance (typical) 4000 pF

Noise equivalent power (typical value) 2.5×10-14 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

UV Silicon Photodiode

IR Silicon Photodiode

Precision Photometry Silicon Photodiode

YJJ S1337-21 Silicon Photodiode The Ideal Solution for Precision Photometry in UV to IR Bands Images