YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

Product Description:

S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

Features:

Detailed parameter

Receiving surface 10 × 10 mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.36A /W

Dark current (Max.) 50 pA

Rise time (typical value) 7 μs

Junction capacitance (typical value) 3000 pF

Noise equivalent power (typical value) 8.0×10-15 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

Specifications:

Precision Photometric Silicon Photodiode

Infrared Sensitivity Silicon Photodiode

YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band Images